作　　者： (沈路）; (李妤晨）; (杨拥军）;

机构地区： 中国电子科技集团公司第十三研究所,石家庄050051

出　　处： 《微纳电子技术》 2017年第9期581-584,共4页

摘　　要： 碰撞电离晶体管(IMOS)在高速、低功耗领域具有很好的应用前景。以优化传统IMOS的工作电压为目的,介绍了一种基于绝缘体上Ge的碰撞电离晶体管(GOI IMOS),利用Synopsys公司的ISE_TCAD对GOI IMOS的性能进行仿真分析与验证。结果表明,GOI IMOS相比于传统的绝缘体上Si的碰撞电离晶体管(SOI IMOS)可在更低的源漏偏压下工作,同时该器件能够实现大的开态电流与陡峭的亚阈值摆幅;另外,GOI IMOS的源漏偏压和栅长均对该器件阈值电压有较大的影响,p型GOI IMOS阈值电压的绝对值随着源漏电压和栅长的增大而减小。以上工作可为IMOS的设计、仿真、制备提供一定的理论指导。 The impact ionization MOS （IMOS） has a good application prospect in the field of high speed and low power. An impact ionization MOS based on germanium-on-insulator （GOI IMOS） was proposed to optimize the supply voltage of the conventional IMOS. The performance of the GOI IMOS was simulated, analyzed and verified by using the ISE _ TCAD of the Synopsys. The results show that compared with the conventional IMOS based on silicon-on-insulator （SOl IMOS）, the GOI IMOS can work under lower source-drain bias voltage, and realize a larger on- state current and an abrupt sub-threshold swing. In addition, the source-drain bias voltage and gate length of the GOI tMOS have a great effect on its threshold voltage. The absolute value of the threshold voltage of the p-type GOI IMOS decreases with the increase of the source-drain bias voltage and gate length. The above work provides a theoretical reference for the design, simula- tion and fabrication of IMOS.

关 键 词： 碰撞电离晶体管 绝缘体上 雪崩击穿 阈值电压 亚阈值摆幅