作　　者： (陈雯芳）; (孙浩）; (方针）; (孙晓玮）;

机构地区： 上海大学通信与信息工程学院,上海200070

出　　处： 《电子器件》 2017年第2期267-271,共5页

摘　　要： 硅埋置型毫米波系统级封装中,传统光敏BCB工艺常在沟槽处引入气泡及凹陷,导致上层金属线不连续。为减少气泡与凹陷的产生,提出一种新型涂覆工艺——"双型三次涂覆工艺",即在使用大厚度BCB的基础上,引入低粘滞性BCB,并三次涂覆BCB。采用此工艺对Ka波段低噪声放大器进行封装,发现气泡数量及凹陷程度大大减小,证明了此工艺的可行性及有效性。在25 GHz～37 GHz频段内,封装后比封装前增益减少1dB,满足高性能封装要求。 In embedded silicon millimeter-wave system-in-package,the air bubbles and depressions in the gap lead to the open circuit of the upper metal lines.＂The Double-Type Three-Coating Method＂was proposed to promote the photosensitive benzocyclobutene（BCB）coating process.The thin BCB with low viscosity was used besides the thick BCB,to reduce the gas sealed at the gap.A Ka-band low noise amplifier was packaged in the new method.The number of bubbles and the degree of depressions are reduced.And the flatness of the metal lines is improved,which proves the feasibility and effectiveness of the Double-Type Three-Coating Method.The measurement results show that the gain after packaging is 1 d B lower than the gain before packaging,which meets the requirements of highperformance package.

关 键 词： 系统级封装 气泡缺陷 双型三次涂覆 毫米波 硅埋置