作　　者： (张增辉）; (刘芳）; (侯云）; (第文琦）;

机构地区： 上海理工大学材料科学与工程学院,上海200093 中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处： 《红外与毫米波学报》 2017年第4期415-419,共5页

摘　　要： 采用化学溶液沉积法在Al_2O_3衬底上生长了Mg_xNi_(1-x)Mn_2O_4(MNM,x=0,0.05,0.10,0.15,0.20)薄膜.通过X射线衍射仪和场发射扫描电子显微镜研究了Mg掺杂浓度对MNM薄膜的结构特性的影响,MNM薄膜均匀致密,具有良好的结晶性,为单一立方尖晶石结构.变温电流-电压特性研究显示,MNM薄膜的电输运特性符合小极化子变程跳跃电导模型,同时获得了不同Mg掺杂浓度的MNM薄膜的电阻率ρ、特征温度T_0和电阻温度系数α.研究结果表明,Mg的掺杂对MNM薄膜的结构和电学特性都有一定的影响. The MgxNi1-xMn2O4 （MNM x=O, 0.05, 0.10, 0.15, 0.20） films were grown on Al2O3 substrate by chemical solution deposition method. The effect of Mg doping on the structural properties of MNM thin films was studied by x-ray diffractomer and field emission scanning electron microscopy. The results show that the MNM films have a single cubic spinel structure and the films are smooth and uniform, which have good crystallinity. The electrical measurements show that the conduction of MNM thin films can be described by a variable range hopping model. The values of resistivity, characteristic temperature To, temperature coefficient of resistance oL for MNM thin films were obtained. The Mg concentration dependence of structural and electrical properties for MNM films was investigated.

关 键 词： 镁掺杂 尖晶石氧化物 负温度系数