作　　者： (孙俊峰）; (朱健）; (李智群）; (郁元卫）; (钱可强）;

机构地区： 南京电子器件研究所,南京210016 东南大学射频与光电集成电路研究所,南京210096

出　　处： 《电子器件》 2017年第2期361-365,共5页

摘　　要： 静电驱动MEMS开关可靠工作需要较高的驱动电压,大多数射频前端系统很难直接提供,因此需要一种实现电压转换和控制的专用芯片,以满足MEMS开关的实用化需要。基于200 V SOI CMOS工艺设计的高升压倍数MEMS开关驱动电路,采用低击穿电压的Cockcroft-Walton电荷泵结构,结合特有的Trench工艺使电路的性能大大提高。仿真结果显示驱动电路在5 V电源电压、0.2 pF电容和1 GΩ电阻并联负载下,输出电压达到82.7 V,满足大多数MEMS开关对高驱动电压的需要。 The reliable work of electrostatically actuated MEMS switch depends on the high actuating voltage which is difficult to be directly provided by most of the RF front-end systems,and an ASIC chip is needed to convert the system’s supply voltage into high voltage and drive the MEMS switch.Based on the 200 V SOI CMOS process,a driving circuit with high step-up ratio is designed for MEMS switch.A new type Cockcroft-Walton charge pump with low breakdown voltage and the special Trench process are adopted.As result,the performance of the driving circuit is improved.At the condition of the 5 V supply voltage and the load of 0.2 pF capacitor in parallel with 1 GΩ resistor,the output voltage of the driving circuit is up to 82.7 V,which meets the need of most MEMS switches.

关 键 词： 电荷泵 开关 升压倍数 工艺