作　　者： (何亮）; (郑介鑫）; (刘扬）;

机构地区： 中山大学,电子与信息工程学院,电力电子及控制技术研究所,广东广州510275

出　　处： 《电力电子技术》 2017年第8期44-48,共5页

摘　　要： 氮化镓(GaN)功率电子器件具有优异的电学特性,在高速、高温和大功率领域具有十分广阔的应用前景,满足下一代功率管理系统对高效节能、小型化和智能化的需求。P型栅和Cascode结构的常关型GaN器件已逐步实现产业化,但鉴于这两种器件结构本身存在的缺点,常关型GaN MOSFET器件方案备受关注。目前,GaN功率开关器件主要朝高频化发展,封装形式从直插型(TO)封装向贴片式(QFN)封装演变,为进一步消除寄生效应对器件高速开关特性造成的不良影响,驱动和功率器件集成的GaN功率集成电路(IC)技术被采用,单片集成的全GaN功率IC是未来的发展方向。 Gallium nitride（GaN）-based power devices have bright market prospects in the field of high-speed,high- temperature and high-power applications owing to their superior electrical properties.P-gate and cascode structure are applied in industrial productions and high-performance normally-off MOSFET gets increasingly attention in the industry. Currently, high frequency power switching is main development trend of GaN power devices.Their packaging formats evolve from transistor outline（TO） package to quad flat no-lead（QFN） package and serious parasitic effects have adverse effect on the switching.GaN power intrgrated circuit （IC） technology, in which driver and power component are integrated together, can effectively eliminate the parasitic effects.Monolithic integrated full GaN power IC is the development direction in the future.

关 键 词： 功率开关器件 氮化镓 常关型器件 封装