作　　者： (李坤）; (张艳）; (王玲）; (张婧）;

机构地区： 上海工程技术大学材料工程学院,上海201620

出　　处： 《微纳电子技术》 2017年第10期658-663,693,共7页

摘　　要： 石墨烯的电化学性能,特别是基于石墨烯的电子转移动力学,是石墨烯在电化学传感器、能源存储与转化等方面应用的基础。阐述了石墨烯的电子转移动力学的研究进展。特别是详细描述了石墨烯边缘、基平面以及缺陷密度等对石墨烯电极的电子转移速率的影响。目前,大部分研究表明,石墨烯的电子转移源于裸露的石墨烯边缘。但值得注意的是,石墨烯的基平面也被发现具有高的电化学活性和快速的电子转移速率。此外,石墨烯的电化学性能还与其缺陷密度密切相关。适当的缺陷密度能够提高石墨烯电子转移速率。 The electrochemical properties of graphene, especially the electron transfer kinetics based on graphene, are essential for its potential application in electrochemical sensor, energy storage and conversion. The research progress of the electron transfer kinetics for graphene is de- scribed. Particularly, the effects of graphene edge, basal-plane and defect density on the electron transfer rate of graphene electrodes are summarized in detail. At present, most studies show that the electron transfer of graphene originates from the exposed graphene edge. It is notable that the basal-plane of graphene has high electrochemical active and rapid electron transfer rate. Besides, the electrochemical properties of graphene are also closely related to its defect density. The ap- propriate defect density can improve the electron transfer rate of graphene.

关 键 词： 石墨烯 电子转移 边缘 基平面 缺陷密度