作 者: (孙爱民); (徐斌); (赵雲); (董延); (张猛);
机构地区: 西北师范大学物理与电子工程学院,甘肃省原子分子物理与功能材料重点实验室,甘肃兰州730070
出 处: 《西北师范大学学报(自然科学版)》 2017年第5期41-44,共4页
摘 要: 采用溶液法在玻璃基底上制备了Cu_2SnS_3薄膜,研究了不同退火温度对Cu_2SnS_3薄膜性能的影响,采用X射线衍射仪、拉曼光谱仪、场发射扫描电子显微镜和紫外-可见分光光度计分别表征了薄膜的物相结构、形貌和光学性能.结果表明,退火温度对Cu_2SnS_3薄膜的相结构、形貌及光学性能有显著影响,随着退火温度的升高,薄膜中的晶粒尺寸明显增大,结晶性也有所增加;退火温度为500℃时,可以生成单相的Cu_2SnS_3薄膜;在不同退火温度下所制备薄膜的禁带宽度均接近1.05eV. In this paper,a solution approach for direct synthesizing Cu2SnS3 thin films on the soda lime glass substrate is reported.The effects of the annealing temperatures on Cu2SnS3 thin films are investigated.X-ray diffraction patterns,Raman spectroscopy,field-emission scanning electron microscopy and UV-vis spectroscopy are used to represented the compositional,structural and optical properties.The preliminary results indicate that the grain size and crystallinity increase with increasing of the annealing temperature.Single-phase Cu2SnS3thin film can be synthetized at 500 ℃.All the samples corresponds to a direct band gap of about 1.05 eV.