作　　者： (杨新荣）; (王海飞）; (赵晶）; (周晓静）; (徐波）; (王占国）;

机构地区： 邯郸学院机电学院

出　　处： 《低温物理学报》 2017年第3期31-34,共4页

摘　　要： 制备了InAs/InAlGaAs/InP(001)量子线结构,利用变温光致发光谱(PL)研究了InAs量子线的光学特性.随温度增加InAs量子线PL谱的发光峰位呈异常的S型变化,即:在15K^35K时峰位红移;在35K^55K温度范围内峰位发生了蓝移;随后随温度进一步增加,峰位再次发生红移.分析认为这种S型峰位的变化可能是由于不同温度下载流子的不同复合机制所引起的. Self-assembled InAs quantum wires were fabricated on a InP substrate by solid-source molecular beam epitaxy(SSMBE).Photoluminescence spectra were investigated in these quantum wires as a function of temperature.An anomalous'S-shaped'shift of the photoluminescence peak energy position is observed from InAs quantum wires grown on InP substrate using InAlGaAs as the matrix layer and the origin of this phenomenon is discussed.We attribute the anomalous temperature dependence of photoluminescence to the different recombination mechanism of the carriers under various temperature.

关 键 词： 量子线 光致发光谱 型峰位变化