作 者: ();
出 处: 《Journal of Semiconductors》 2017年第9期1-7,共7页
摘 要: The effect of doped-ZnO transparent conductive oxide (TCO) with metal (Ag)-fingers contact on GaN/InGaN solar cell is investigated through numerical simulations. An optical and electrical analysis of different dopant elements (such as B, A1, Ga, In and Sn) with ZnO as a top TCO layer is studied. A comparative analysis of metal square pad electrode, metal grid pattern electrode and metal-finger/ZnO type electrodes are taken into consideration to ensure the effect of anti-reflectivity by ZnO. The effect of thickness of ZnO and i-InGaN layer on performance of solar cell is also studied in detail. The proposed solar cell structure with Ag-fingers/ZnO:Al as top contact electrode shows interesting device characteristics compared to other dopants and metal top electrodes. The device achieves open circuit voltage -2.525 V, short circuit current -4.256 mA/cm^2, fill factor -87.86% and efficiency -9.22% under 1 Sun, air mass 1.5 global illumination. The effect of doped-ZnO transparent conductive oxide (TCO) with metal (Ag)-fingers contact on GaN/InGaN solar cell is investigated through numerical simulations. An optical and electrical analysis of different dopant elements (such as B, A1, Ga, In and Sn) with ZnO as a top TCO layer is studied. A comparative analysis of metal square pad electrode, metal grid pattern electrode and metal-finger/ZnO type electrodes are taken into consideration to ensure the effect of anti-reflectivity by ZnO. The effect of thickness of ZnO and i-InGaN layer on performance of solar cell is also studied in detail. The proposed solar cell structure with Ag-fingers/ZnO:Al as top contact electrode shows interesting device characteristics compared to other dopants and metal top electrodes. The device achieves open circuit voltage -2.525 V, short circuit current -4.256 mA/cm^2, fill factor -87.86% and efficiency -9.22% under 1 Sun, air mass 1.5 global illumination.