作 者: (王飞);
机构地区: 上海华虹宏力半导体制造有限公司,上海201203
出 处: 《集成电路应用》 2017年第9期43-46,共4页
摘 要: 根据深沟槽型超级结器件的耐压原理和沟槽刻蚀填充的工艺特征,可以通过对填充工艺的调整来提升产品的耐压能力。基于沟槽型超级结MOSFET,分析了深沟槽型超级结器件的耐压特性与工艺相关性,提出了针对性的解决方案,并且通过理论和流片进行验证。 According to the pressure resistance principle of the deep groove type super junction device and the characteristics of groove etching filling process, the product can be improved by adjusting the filling process. Based on deep trench super junction MOSFET, the file provided the correlation between break down voltage to process character and the specific suggestion. The mechanism and silicon data are provided also.