作　　者： (贾辉）; (石璐珊）; (黄鑫）; (叶太兵）;

机构地区： 公安海警学院基础部,宁波315801

出　　处： 《人工晶体学报》 2017年第8期1540-1544,共5页

摘　　要： 研究了衬底的Al化处理对采用MOCVD法在c面蓝宝石衬底上高温生长Al N外延层的影响机制。通过原位监测监控整个外延生长过程,同时对Al N外延层的表面形貌和晶体质量以及应变状态进行表征研究。结果表明衬底的Al化处理导致Al N外延层的表面更加平整但是晶体质量下降,同时对外延层的应变也有很明显的影响。 The aim of this paper is to examine the effects of TMAl preflow on the properties of AlN epitaxial layer grown on c-plane sapphire substrates by metalorganic chemical vapor deposition（ MOCVD）using high-temperature treatments. The entire epitaxial growth process was monitored by in situ Epitt. At the same time,the surface morphology and crystal quality of AlN epitaxial layer were studied. The results show that TMAl preflow leads to the decrease of the crystal quality of the AlN epitaxial layer,and it also has a significant effect on the strain.

关 键 词： 衬底的 化处理 晶体质量 应变