作　　者： (黄书山）; (张宇）; (廖永平）; (杨成奥）; (柴小力）; (徐应强）; (倪海桥）; (牛智川）;

机构地区： State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026

出　　处： 《Chinese Physics Letters》 2017年第8期59-62,共4页

摘　　要： We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three different tapered waveguide structures with varying flare angles are fabricated to optimize the output power and spatial-mode performance. The best devices exhibit single-spatial-mode operation with room-temperature output power up to 350？mW in continuous-wave mode at an emission wavelength around 2.0？μm with a very small far-field lateral divergence angle, which is beyond state of the art in terms of single-spatial-mode output power. We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three different tapered waveguide structures with varying flare angles are fabricated to optimize the output power and spatial-mode performance. The best devices exhibit single-spatial-mode operation with room-temperature output power up to 350？mW in continuous-wave mode at an emission wavelength around 2.0？μm with a very small far-field lateral divergence angle, which is beyond state of the art in terms of single-spatial-mode output power.