作　　者： (刘玉柱）; (李炳生）; (林华）; (张莉）;

机构地区： Jiangsu Collaborative Innovation Center on Atmospheric Environment and Equipment Technology, Nanjing University of Information Science ＆ Technology, Nanjing 210044

出　　处： 《Chinese Physics Letters》 2017年第7期160-163,共4页

摘　　要： The evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of reerystallized layers in 15 keV He＋ ion implanted 6H-SiC （0001） wafers are characterized by means of cross-sectional transmission electron microscopy （XTEM） and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900℃. The recrystallization region contains a 3C-SiC structure and a 6H-SiC structure with different crystalline orientations. A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles. With increasing annealing to 1000℃, 3C-SiC and columnar epitaxial growth 6H-SiC become unstable, instead of [0001] orientated 6H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing. The possible mechanisms for explanation are also discussed. The evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of reerystallized layers in 15 keV He＋ ion implanted 6H-SiC （0001） wafers are characterized by means of cross-sectional transmission electron microscopy （XTEM） and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900℃. The recrystallization region contains a 3C-SiC structure and a 6H-SiC structure with different crystalline orientations. A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles. With increasing annealing to 1000℃, 3C-SiC and columnar epitaxial growth 6H-SiC become unstable, instead of [0001] orientated 6H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing. The possible mechanisms for explanation are also discussed.