导　　师： 李玲

学科专业： 070205

授予学位： 硕士

作　　者： ;

机构地区： 暨南大学

摘　　要： 二氧化锡/(SnO2/)是一种宽带隙半导体,其带隙约3.6eV且具有较高的激子束缚能130meV,室温稳定化学稳定性高,广泛应用在气敏元件、太阳能电池及电极等材料中,是一种用途十分广泛的特种功能薄膜。 为了获得透明度高、发光性能优异以及电阻率小的透明导电光致发光薄膜,本论文以无机金属盐SnCl2·2H2O、SbCl3和CoCl2-6H2O为原料,采用溶胶凝胶法在玻璃基片上分别制备和获得了SnO2多层薄膜。采用X射线衍射仪、原子力显微镜对这些薄膜的晶体结构、表面形貌进行了表征,利用紫外可见分光光度计、荧光分光光度计和四探针电阻测试仪分别对薄膜样品在紫外可见光区的透过率、薄膜的发光性能以及薄膜的方块电阻进行测试,根据测试的结果分析和讨论了热处理温度和掺杂浓度等不同参数对SnO2及其掺杂薄膜结构、发光性能及电学性能的影响。研究结果表明： 1.采用溶胶-凝胶法制备出的SnO2薄膜的和掺杂的SnO2薄膜样品微晶都为四方金红石结构。提高热处温度促进了晶粒的发育,有助于薄膜晶粒结晶度的提高。Sb掺杂量15/%时,薄膜具有较好的结晶性能。Co掺杂的SnO2薄膜,Co掺杂为2/%时,薄膜结晶最好。过多的掺杂/(Sb掺杂>20/%、Co掺杂>3.0/%/)会破坏薄膜的晶体结构；对于SnO2薄膜,薄膜的透过率、光致发光强度以及方块电阻随热处理温度的升高先提高后降低；对于掺杂的Sn02薄膜,随掺杂浓度的增加,薄膜的透过率,光致发光强度以及方块电阻随掺杂浓度的增加先升高后降低。 2.当热处理温度为550℃时,SnO2薄膜样品结构最完整,550nm处透过率达到了89/%,光致发光最强峰相对强度达到了167.9,方块电阻最低为2703Ω//□；当Sb掺杂量为15/%时,550nm处薄膜透过率达到了最高91/%,光致发光最强峰相对强度达到了201.1,方块电阻达到最低119Ω//□；当Co掺杂量为2/%时,薄膜的结构完整,550nm处的透过率达到了90/%；光致发光最强峰位相对强度达到了160.1,方块电阻最低876Ω//□。 3.将Sb和Co掺杂的SnO2薄膜的光电性能进行比较得出：Sb掺杂的SnO2薄膜的的透过率、光致发光性能以及导电性能都优于Co掺杂的SnO2薄膜。 Tin dioxide/(SnO2/) is a wide-band-gap semiconducter/(-3.6eV/) and the binding energy of the exciton is about 130meV. SnO2 can be used in many fields, such as gas sensors,solar cells and transparent electrodes, is a kind of special function thin film used extremely widespread. In order to obtain the films with high transparency, excellent light performance, and electrical resistivity of the transparent conductive, we use metal salts SnCl2·2H2O、SbCl3 and CoCl2·6H2O as precusors, and prepared thin films of Sb-doped and Co-doped tin oxide on glasses by the sol-gel method. The microstructure and surface morphology of Sn2 thin filmswere investigated by XRD and AFM; The average transmissibility in visible light of SnO2 thin films were measured by the Ultraviolet-Visible Spectrophotometer. The luminescence of SnO2 thin films were measured by fluorospectrophotometer. The sheet resistance value of SnO2 thin films were measured by the DSY-5 four probes resistances reflectoscope reflector. The influences of annealing temperature and dopant amount of Sb-doped and Co-doped SnO2 thin films were discussed. The results were showm as follows: 1.It was found that the microcrystalline of Sb-doped thin films and Co-doped thin films are quartet rutile structure. which are the same as SnO2. and higher temperature can be benefit to the crystallization of SnO2 crystals. Sb-doped films with good crystallinity were grown with dopant amount of 15/%-20/%; And the Co-doped films with best crystallinity were grown with dopant amount of 2/%. But too high doping level /(Sb>15/%、Co>2/%/)will be harmful to the crystallization performance of the films. For the undoped SnO2 films, films transmittance, photoluminescence intensity and the sheet resistance increased as temperature increased and then decreased. For the Sb-doped and Co-doped SnO2 thin films with doping concentration increasing, the films'transmissibility、photoluminescence intensity and the sheet resistance with the doping concentration increased and then decreased. 2. For the undoped SnO2 films, When the heat treatment temperature is 550℃, SnO2 thin films structure the most complete, transmittance reached 89/% on 550nm, the relative photoluminescence intensity of the strongest peak reached 167.9, the lowest sheet resistance 2703Ω//□; when Sb-doped 15/%, Transmissivity achieve the highest 91/% on 550nm, the relative photoluminescence intensity of the strongest peak reached 201.1, the lowest sheet resistance of 119Ω//□; when the Co-doped 2/%, the film structure integrity, surface smoothness, transmittance reached 90/% on 550nm; PL relative intensity of the strongest peak reached 160.1, the lowest sheet resistance of 876Ω//□. 3.Compared with Sb doped SnO2thin films and Co doped SnO2 thin films,then found out Sb-doped SnO2 Films transmittance, photoluminescence properties and electrical conductivity better than Co-doped SnO2 thin films'.

关 键 词： 溶胶 凝胶法 掺杂 掺杂 透过率 光致发光 方块电阻

分 类 号： [O484.1]

领　　域： [理学] [理学]