导　　师： 林为干

学科专业： 080904

授予学位： 博士

作　　者： ;

机构地区： 电子科技大学

摘　　要： 微电子技术的高速发展和军事需求是推动微波单片集成电路/(MMIC/)向前发展的主要力量,MMIC可广泛应用于制导、雷达和卫星通信等领域,在国民经济建设和国防建设中必将发挥越来越重要的作用。异质结高电子迁移率器件的出现给GaAs MMIC的发展注入了新的活力,赝配高电子迁移率晶体管/(PHEMT/)具有优异的高频特性、功率特性和低噪声特性,使其成为现今微波单片集成电路发展中最具应用前景的器件之一。PHEMT器件的非线性模型在微波单片集成电路设计中起着至关重要的作用,并且在电路设计和工艺设计之间发挥了桥梁的作用,能够提高电路设计的准确性,减少工艺反复,降低产品成本,缩短研制周期。论文的重点在于GaAs PHEMT器件非线性模型的研究和毫米波单片功率放大器的设计,具体研究内容如下: 1.针对微波单片集成电路中主要的无源元件/(方螺旋电感和MIM电容/)等效电路模型进行深入研究,并详细地给出等效电路模型中每个参数的物理解析表达式。提出了考虑频率对螺旋电感等效电路模型中自感及反馈电容影响新的计算公式。 2.从PHEMT的物理结构和实际工艺出发,建立PHEMT器件的非线性等效电路模型。对PHEMT的电流模型/(包括漏电流模型和反映器件正向导通特性的栅电流模型/)和非线性电容模型进行深入研究;在测量数据的基础上,对等效电路模型的寄生参数和本征参数的提取方法进行详细的阐述。提出能够准确模拟PHEMT漏源电流温度特性的改进的电流模型方程。并成功地将改进模型写入ADS的符号定义器件来模拟PHEMT的微波特性。实验结果表明论文提出的非线性等效电路模型能够准确地模拟PHEMT器件的小信号S参数和电流电压特性。 3.为验证本文提出的非线性等效电路模型及提取方法的准确性,设计、加工了Ka频段单片功率放大器,测试结果与� The high-speed development of microelectronics technology and military demands are the main strength to drive microwave monolithic integrated circuits forward. The MMICs can be applied to guidance, radar and satellite communications, and so on. The MMICs become more and more important in national economic construction and the building of national defence. The appearance of heterojunction high electron mobility devices has made the new vigor poured into the development of GaAs MMICs. Pseudomorphic high electron mobility transistors /(PHEMTs/) have outstanding high-frequency characteristics, power characteristics and low-noise characteristics. And these merits have made the PHEMTs one of the most promising devices. The large-signal nonlinear equivalent-circuit model of PHEMTs has played the key role in MMICs designs, and the model is the bridge between the circuit design and processing design. It is able to improve the circuit design accuracy, decrease the processing repeating, reduce the production cost and shorten research period. The emphasis of this work lies in the study of GaAs PHEMT nonlinear model and the design of millimeter-wave monolithic power amplifier. Detailed study contents are as follows: 1. The equivalent circuit models of the primary passive elements in MMICs /(including square spiral inductors and MIM capacitors/) have been deeply studied. In addition, physical analytical expressions have been given in detail. Furthermore, new formulas taking account of the frequency effect on the self-inductance and feedback capacitance in a spiral inductor equivalent-circuit model are proposed. 2. From the physical structure and specific process, the nonlinear equivalent-circuit models of the PHEMT devices have been established. The current models /(including the drain current model and the gate current model which is able to reflect the forward characteristics/), and the nonlinear capacitance model have been studied deeply. Based on the measured data, the extraction method of the extrinsic and intrins

关 键 词： 微波单片集成电路 赝配高电子迁移率晶体管 非线性模型 功率放大器

领　　域： [电子电信] [电子电信]