导　　师： 李凤珍

学科专业： 080502

授予学位： 硕士

作　　者： ;

机构地区： 哈尔滨理工大学

摘　　要： 本文以电子封装为应用背景,采用挤压铸造法制备了增强体体积分数为55/%,颗粒粒径分别为10μm、20μm 和63μm 的SiCp//Cu 复合材料。利用金相显微镜、扫描电镜、透射电镜对复合材料的微观组织特征进行了研究,利用分析天平、热膨胀测试仪、热导率测试仪、布氏硬度和三点弯曲等多种手段测试了复合材料的物理性能和力学性能,并分析了相关的影响因素。 采用挤压铸造法制备了高致密的SiCp//Cu 复合材料,其中,颗粒粒径为63μm 的SiCp//Cu 复合材料致密度达到97.8/%,高于国内同类材料水平。复合材料组织均匀、致密;透射组织观察表明,SiC 颗粒中存在大量层错,基体中的缺陷以位错为主;SiC-Cu 界面存在界面反应,分析表明, SiC 在高温下分解为游离态的碳和Si,后者固溶进基体铜中形成一种新的CuSi 固溶物;碳在铜基体内部析出且呈颗粒状分布。 本文中,10μmSiCp//Cu 复合材料的平均线膨胀系数/(20~100 ℃/)达到8.54×10-6//℃,满足电子封装使用性能要求;随着SiC 颗粒尺寸的减小,复合材料的热膨胀系数降低;退火处理后材料的热膨胀系数小于铸态材料。复合材料的热导率随着SiC 颗粒尺寸的增加而增大,这和SiC-Cu 界面热阻有关。研究表明,颗粒尺寸的减小带来了相对多的界面,增加了界面热阻的影响;退火处理对复合材料导热率的影响不大。 复合材料具有较优异的力学性能,随着SiC 颗粒尺寸减小,复合材料的硬度、三点弯曲强度和弹性模量逐渐增加。退火处理后复合材料的三点弯曲强度较铸态时略有下降,但弹性模量变化不明显。SEM 断口观察表明,颗粒存在破碎和剥离现象,基体中有少量的韧窝和撕裂棱,材料的断裂方式整体表现为脆断。 SiC particles reinforced copper matrix composites /(Vf=55/%/), with the average sizes of 10μm, 20μm and 63μm, were fabricated by squeeze-casting technique for electronic packaging applications. The microstructures of SiCp//Cu composite were studied by using optical microscope, scanning electron microscope and transmission electron microscope. The physical and mechanical properties of SiCp//Cu composite were analyzed by means of analytical balance, thermal dilatometer, thermal conductivity tester, Brinell hardness and three-point bending tests, also with their influencing factors discussed. The SiCp//Cu composite with high densifications can be produced by squeeze-casting technique, and the densification of SiCp//Cu composite with particle size of 63μm reaches 97.8/%, which is higher than the same materials reported in-country. The microstructure of SiCp//Cu composite are dense and uniform. TEM observations indicate high-density dislocations are found in the matrices of composites and the stacking faults in the SiC particles. The SiC-Cu interfaces exists interface reactions. And the analysis shows SiC particles decompose into carbon and silicon under high temperature, and the latter dissolves into the matrix copper to form a new CuSi solid solution, the carbon precipitates into copper and forms conglomerations with particle shapes. In the paper, the average CTEs of SiCp//Cu composite with particle size of 10μm gets 8.54×10-6//℃, which can meet the usage properties of electronic packaging materials. The CTEs of SiCp//Cu composite decrease with the SiC particle size, and after annealing the CTEs of SiCp//Cu composite are lower than that as cast. The thermal conductivities of SiCp//Cu composite increase with the particles size, which is related with SiCp//Cu interface thermal resistance. The investigations show that the decrease of particles size bring relatively larger interfaces which improve the effects of interface thermal resistance. Annealing treatment has little effect

关 键 词： 电子封装 铜基复合材料 微观组织 物理性能 力学性能

领　　域： [一般工业技术]