导　　师： 刘彭义

学科专业： 070205

授予学位： 硕士

作　　者： ;

机构地区： 暨南大学

摘　　要： TiO/_2半导体由于其优越的气敏、湿敏、光催化、光伏特性，自洁净等多种功能，在工业应用领域中显示诱人的前景。TiO/_2薄膜气敏元件具有性能一致性好，易于集成化等优点，一直受到人们的广泛关注。发展TiO/_2薄膜传感器，首要问题是了解和改善TiO/_2薄膜的微观结构和性能。本实验是采用磁控溅射方法，在不同的温度下制备了TiO/_2薄膜，并对薄膜进行了不同温度和时间的退火处理，通过原子力显微镜/(AFM/)、X射线衍射/(XRD/)、扫描电镜/(SEM/)等检测手段对薄膜的表面形貌和组成结构进行了分析，结果如下： /(1/) 溅射工艺条件与薄膜沉积速度的关系表明：采用1.2Pa工作气压，180W的射频功率TiO/_2薄膜的沉积速率为40nm／h，并随射频功率的增加而提高，呈近似的线性关系，在0.3Pa～1.6Pa气压范围中，氩气压强升高沉积速率迅速增加，溅射温度提高和退火处理能使薄膜的厚度减小和折射率提高。 /(2/) 常温下制备的TiO/_2薄膜是无定型的，300℃溅射薄膜表面有致密的晶粒，热处理温度升高，晶粒变大，晶相开始转化，800℃退火TiO/_2完全转化为金红石结构。 /(3/) 没有经过热处理的TiO/_2薄膜与表面水滴的接触角为64°，经过650℃热处理后薄膜与水滴的接触角为0°，掺杂SnO/_2对TiO/_2薄膜的亲水性有所改善。 Titanium dioxide/(TiO2/) owned a programming prospect in industrial application because of its eminent characteristics in gas-sensing, humidity-sensing, photocatalytic, photovoltaic, self-cleansing, etc. TiO2 thin film gas sensor, with its excellent property consistency, easy integration and some other advantages, gets more and more favorites and attention from the people. To develop TiO2 thin film gas sensor, the priority should be located in understanding and ameliorating its microstructure and properties. This experiment deposited the TiO2 thin film by magnetron sputtering method in different substrate temperature. The As-grown films were treated with different annealing temperature and time. With the application of Atomic Force Microscope /(AFM/), X-ray Diffractometer /(XRD/), Scanning Electron Microscope /(SEM/), their superficial morphology and structure were studied. The results were as follows: /(1/). The relationship between sputtering conditions and the depositional speed shows: with working pressure 1.2 Pa, sputtering power 180W, the depositional speed of TiO2 thin film is 40nm//h, and increases with the increasing of sputtering power. It can be also founded that the depositional speed is nearly proportional to the working pressure: within the range of 0.3Pa to 1.6Pa, the depositional speed increases linearly with the increase of Ar pressure. With the enhancement of the substrate's temperature of sputtering or annealing, the resulted thin films show a tendency of decreasing in thickness, and increasing in refractivity. /(2/). The TiO2thin film deposited at room temperature is amorphous. The one deposited at 300 ℃ substrate temperature owns denser crystallites. During the annealing process, with the increasing of annealing temperature, the crystallites become bigger, and crystalline phase begins to transfer. When the annealing temperature gets to 800℃, TiO2 transfers to rutile structure completely. /(3/). The contact angle with water is 64?for the thin film without a

关 键 词： 磁控溅射 二氧化钛薄膜 传感器 结构特性 亲水性

领　　域： [理学] [理学]