机构地区: 中国科学院半导体研究所
出 处: 《物理学报》 2004年第6期1810-1814,共5页
摘 要: 用离子注入的半绝缘GaAs晶片作为吸收体和输出镜 ,在双包层掺镱光纤激光器上实现了调Q锁模 .离子注入的能量为 4 0 0keV的As+ 离子 ,注入剂量为 1 0 1 6 cm2 ,然后在 6 0 0℃下退火 2 0min .当抽运功率为 5W时 ,脉冲平均输出功率为 2 0 0mW ,调Q包络重复频率为 5 0kHz ,半高宽为 4 μs,锁模脉冲重复频率为 1 5MHz . We report the technique of the ion_implanted semi_insulating GaAs wafer used for passive Q_switched mode locking in double_cladding Yb:fiber laser. The wafer was implanted with 400_keV energy, 10 16 /cm 2 dose As + ions, and was annealed at 600℃ for 20 min. At the pump power of 5W, we achieved output power of 200mW. The repetition rate of envelope of Q_switched mode locking is 50_kHz with a FWHM envelope of 4μs. The repetition rate of mode locked pulse train was found to be 15_MHz. This is the first report of such a kind of laser to the best of our knowledge.
关 键 词: 离子注入砷化镓 掺镱光纤激光器 被动调 锁模 锁模脉冲
领 域: [电子电信]