机构地区: 华中科技大学光学与电子信息学院电子科学与技术系
出 处: 《电子元件与材料》 2004年第6期35-37,共3页
摘 要: 为了研究制备工艺对氧化钒薄膜微观结构的影响,采用X射线衍射和扫描电镜,对用sol-gel法制作的、不同热处理条件下的硅基氧化钒薄膜之结构及形貌进行了分析。结果表明,470℃下制作出的有种子层薄膜无裂纹、致密性好、晶粒尺寸分布均匀,在此温度下热处理4 h得到的有种子层氧化钒薄膜V2O5相最纯,衍射峰最强,而提高热处理温度会导致晶向杂乱,V2O5相的衍射峰强度降低,使得VO2相增多。 Investigated was the effect of preparing process on the microstructure of thin film of vanadium oxide.This film was prepared on the silicon substrates by sol-gel method , and was heat-treated for four hours at 470℃. XRD and SEM were used to analyze the thin film and the results indicated that the film obtained had: (1) good denseness, even grain size, and no cracks; (2)the purest V2O5 crystallization. With increasing heat-treatment temperature, the intensity of diffraction peak of V2O5 crystallization will decrease, and the VO2 crystallization will increase.