作　　者： ; ; ; ;

机构地区： 西南师范大学

出　　处： 《重庆邮电学院学报（自然科学版）》 2004年第3期108-111,共4页

摘　　要： 以NiFeNb为新种子层,采用直流磁控溅射法制备了具有不同Nb含量(x)、种子层厚度(d)和NiFe厚度(t)的(Ni82Fe18)(1-x)Nbx(dA)/Ni82Fe18(tA)/Ta(30A)纳米级坡莫合金系列膜,并对部分样品进行了中温退火。测量了样品的磁电阻曲线和微结构。从实验角度研究了零场电阻率(ρ)随x、d、t及退火的变化。结果表明,NiFeNb作为种子层能较大地提高坡莫合金薄膜的ρ;一定厚度坡莫合金薄膜的ρ极大的最佳工艺条件是x约为27.5,d约为27.5A;不同Nb含量、种子层厚度等工艺条件引起坡莫合金薄膜具有不同颗粒粒径分布,从而引起4s↓电子受到的内禀散射、颗粒表面和边界散射及其关系的不同,再加上织构、4s↓电子球对称性受破坏程度和薄膜均匀程度的不同导致了零场电阻率随工艺条件的变化。 The NiFeNb is used as the new seed layer.The films(Ni_(82)Fe_(18))_((1-x))Nb_x(d)/Ni_(82)Fe_(18)(t)/Ta(30 ) with different Nb concentrations (x),seed layer thickness (d) and NiFe thickness (t) are prepared with a direct current magnetron sputtering system. Some samples are annealed at the moderate temperature (200 ℃). The magnetoresistance curves and microstructures of some samples are measured. The variation of resistance(ρ) with the x,d,t and annealing are investigated from experiments. The results show that: as the seed layers, NiFeNb can improve the ρ dramatically; the optimal conditions are x=27.5% and d=27.5 for films with certain NiFe thickness;such processing condition as the amount of Nb,the thickness of seed layer, the x,d,t and annealing causes the permalloy films to have different distribution of grain and causes different textures,brokenspherical symmetries of 4s_↓,homogenization and intrinsic scattering, and grain surface or boundary scattering from different grain size distributions.

关 键 词： 新种子层 纳米级 零场电阻率 坡莫合金薄膜

领　　域： [理学] [理学] [电气工程] [一般工业技术]