作　　者： ; ; ; ; ;

机构地区： 湖南大学

出　　处： 《光电子．激光》 2004年第5期572-574,共3页

摘　　要： 分别制备了4种有机电致发光器件(OLEDs):ITO/Alq3/Al;ITO/Alq3/LiF(1.0nm):Al;ITO/Alq3/LiF(1.5nm)∶Al;ITO/Alq3/LiF∶(2.0nm)Al。研究了LiF的引入对金属电极与发光层界面的影响以及各种不同的界面态对器件发光性能的影响。研究结果表明:适当的LiF厚度的引入不仅可以改善器件的界面特性,而且可以提高器件的发光亮度及发光效率。 An experimental study on the performance of organic electroluminescent devices (OLEDs) was presented. Four organic electroluminescent devices with different thickness of LiF layer A: ITO/Alq3/Al, B: ITO/Alq3/LiF:Al (1 nm), C: ITO/Alq3/LiF:Al (1.5 nm), and D: ITO/Alq3/LiF:Al (2 nm) were fabricated by vaporing method. And the effects of LiF layer on the properties of cathode/Alq3 interface and the performance of OLEDs were intensively investigated. It was shown that 1.5 nm LiF layer not only could improve the properties of cathode/Alq3 interface but also could enhance the brightness of OLEDs. At the applied voltage 10 V, the barrier height of cathode with 1.5 nm LiF/Alq3 interface was only 3.12 eV, and its brightness achieved the maximum value 800 cd/m2.

关 键 词： 界面 有机电致发光 发光亮度 器件 器件性能

领　　域： [电子电信]