作　　者： ; ; ;

机构地区： 西北工业大学材料学院

出　　处： 《西北工业大学学报》 2004年第2期260-263,共4页

摘　　要： 采用射频磁控反应溅射法 ,以高纯 Al为靶材 ,高纯 N2 为反应气体 ,成功制备了氮化铝( Al N)薄膜。研究了 N2 气流量、射频功率、溅射气压等工艺参数对 Al N膜沉积速率的影响规律。结果表明 ,随着 N2 气流量的增加 ,靶面溅射由金属态过渡到氮化态 ,沉积速率随之明显降低 ;沉积速率随射频功率的增大几乎成线性增大 ,随靶基距的增大而减小 ;随着溅射气压的增大 ,沉积速率不断增大 ,但在一定气压下达到最大值后 ,沉积速率又随气压不断减小。 Aluminum nitride(AlN) thin film is of powerful antioxidation for diamond windows and domes. The AlN thin films were prepared by magnetron reactive sputtering in Ar and N2 mixtures with a high pure Al disc as the target. In order to control the film thickness, influences of parameters, such as nitrogen flow rate, sputtering power and working pressure, on the film deposition rate were studied systematically. The results as given in Figs.2 to 5 show that: (1) There is a sharp decrease in the deposition rate with the increase of nitrogen partial pressure(see Fig. 2), which is predominantly due to the abrupt transition from “metallic” to “nitride” sputtering; (2) The deposition rate increases almost linearly with increasing sputtering power(see Fig.3), and decreases with increasing target-substrate distance(see Fig.4); (3) The deposition rate firstly increases with increasing sputtering pressure, and then, after reaching a maximum, decreases as shown in Fig.5.

关 键 词： 磁控反应溅射 薄膜 沉积速率

领　　域： [理学] [理学]