作　　者： ; ; ;

机构地区： 华南理工大学理学院应用物理系

出　　处： 《电子产品可靠性与环境试验》 2004年第2期10-13,共4页

摘　　要： 介绍了薄栅氧化层TDDB可靠性评价的高温恒定电场试验方法,并完成了E模型的参数提取,同时以MOS电容栅电流Ig为失效判据,对某工艺的MOS电容栅氧化层TDDB寿命进行了评价。该试验方法解决了在高温条件下对工作器件进行可靠性评价的问题,方法简便可靠,适用于亚微米和深亚微米工艺线的可靠性评价。 In this paper, a TDDB method based on the constant electric field at high temperature is introduced; E model parameter is extracted from the results of the accelerated lifetime experiment. Moreover, the reliability of gate oxide is evaluated according to the failure criterion of MOS capacitor gate current. Therefore the method to evaluate the reliability of the devices operated at high temperature is presented. This method is convenient and reliable. It is feasible for the evaluation of sub - micrometer and deep sub - micrometer processes.

关 键 词： 栅氧化层 可靠性评价 模型 参数提取

领　　域： [电子电信]