作　　者： ; ; (钟建薇）; (赖永雄）; (李基森）;

机构地区： 华南理工大学

出　　处： 《电子元件与材料》 2004年第4期8-10,24,共4页

摘　　要： 对具有Y5V特性的BCTZ系抗还原介质材料进行了施主离子(Y3+)和受主离子(Mn2+)共掺杂。以该电介质制备出多层陶瓷电容器,并测试了其介电性能。讨论了Y3+和Mn2+离子共掺杂对Y5V特性的BCTZ系介质材料介电性能的影响。通过施主-受主掺杂,电容器的耐压升高,损耗降低,介电常数减小。并且,容量温度系数满足Z5U特性。 Anti-reducing dielectric materials with Y5V characterization of BCTZ system were co-doped with donor ions (Y3+) and acceptor ions (Mn2+). Multilayer ceramic capacitors were prepared using these dielectrics, and their electrical properties were measured. The effects of co-doping with Y3+ and Mn2+ on the properties of the dielectrics were discussed. The breakdown voltage is increased and both the dissipation factor and the dielectric constant are decreased by donor-acceptor ions co-doping. The temperature coefficient of capacitance meets Z5U EIA specifications.

关 键 词： 多层陶瓷电容器 镍内电极 抗还原电介质 掺杂 介电性能

领　　域： [电气工程]