作　　者： ; ;

机构地区： 陕西科技大学

出　　处： 《稀有金属材料与工程》 2004年第3期333-336,共4页

摘　　要： 以Sm和Sm2S3为靶材,采用双靶子溅射系统,于单晶Si基板上成功制作了S-SmS和M-SmS微晶薄膜,并采用XRD,AFM和RBS及光学性能测定等测试手段对薄膜进行了分析测试。结果表明:基板温度低于200℃的情况下;或者在基板温度为400℃,薄膜组成中Sm过量的条件下均可以直接获得在常温常压下稳定存在的M-SmS微晶薄膜。S-SmS和M-SmS微晶薄膜表现出明显不同的光学特性。 The semiconductor phase SmS(S-SmS) thin film and the conductive phase SmS(M-SmS) thin film stable at atmospheric pressure were deposited on Si(100) substrate by co-sputtering with the targets Of Sm2S3 and SmS. X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and spectrophotometry were employed in film characterization. It can be concluded that at the substrate temperature lower than 200degreesC or enriching the composition of Sin in film as the substrate temperature increase to 400degreesC, the M-SmS thin film could be achieved. The S-SmS and M-SmS films differ substantially in optical properties from the visible region to the IR.

关 键 词： 薄膜 双靶溅射法 光学薄膜 光学性能 微晶薄膜 微晶薄膜

领　　域： [理学] [理学]