作　　者： ; ; ; ; ;

机构地区： 浙江大学材料科学与工程学系硅材料国家重点实验室

出　　处： 《材料科学与工程学报》 2004年第1期9-11,共3页

摘　　要： 采用溶胶 凝胶提拉法在石英玻璃衬底上生长了ZnO薄膜。对薄膜的XRD分析表明ZnO薄膜为纤锌矿结构并沿c轴择优取向生长。透射光谱表明薄膜的禁带宽度为 3 2 8eV ,与ZnO体材料的禁带宽度 3 30eV基本相同。用荧光光谱分析了经过 4 0 0～ 6 0 0℃热处理获得的ZnO薄膜 ,结果表明ZnO薄膜在室温下可获得较强的紫外带边发射。适当选择热处理温度可以获得无可见波段发射的ZnO薄膜。 Zinc oxide films were prepared on quartz substrates by the sol-gel process.The ZnO films showed a (002) oriented hexagonal wurtzite structure as observed by XRD.Optical transmittance spectrum of the ZnO films indicated that the band-gap of the thin films was 3^28eV,nearly the same as that of ZnO bulk crystal.Photoluninescence spectra of the ZnO thin films prepared at different processing temperature were investigated.The results showed that all ZnO thin films emitted strong UV photoluminescence,and especially the film processed at 469℃ emitted strong UV photoluminescence without visible emission band at room temperature.It′s therefore considered that 469℃ is the optimal processing temperature for ZnO film preparation by this method.

关 键 词： 溶胶 凝胶提拉法 薄膜 荧光光谱 透射光谱 半导体材料

领　　域： [电子电信] [理学] [理学]