作　　者： ; ; ; ; ;

机构地区： 云南师范大学

出　　处： 《功能材料》 2003年第2期170-172,共3页

摘　　要： 研究了用高压低温法制备的硅材料的性能。进行了不同的温度条件下制备陶瓷硅材料的实验研究,获得了最佳的制备条件。用XRD分析了材料的物相;阿基米德法测量了制备材料的密度;对材料的电阻率和硬度进行了测量。结果表明:用高压低温方法可以制备出无氧化相存在的陶瓷硅材料,其最佳的烧结温度为600℃;样品具有较好的机械强度和硬度,获得了适于制备多晶硅薄膜的衬底材料。 We have studied performance of silicon material by high pressure and low temperature. Ceramic silicon materials have been obtained under different temperatures. By analyzing performance of ceramic silicon materials, the optimum preparing condition has been obtained. The phase and structure of samples have been analyzed by XRD. Densities of samples were measured by Archimedes' s method. The resistivity and hardness of samples were also measured. The results show that ceramic silicon materials without oxidized phase can be produced by high pressure and low temperature and the optimum temperature was about 600℃. The samples have good hardness and mechanical intension and can be used for the substrates of poly-Si thin films.

关 键 词： 陶瓷硅材料 性能 高压 低温 制备 半导体材料

领　　域： [电子电信]