作　　者： ; ;

机构地区： 中国石油大学华东物理科学与技术学院物理系

出　　处： 《青岛大学学报（自然科学版）》 2003年第4期37-40,共4页

摘　　要： 利用磁控溅射方法制备了不同金属体积分数x的(Fe21Ni79)x-(Al2O3)1-x纳米颗粒膜样品,并对样品的霍尔效应进行了研究,在x=0.48时,样品的饱和霍尔电阻率为4.5μΩ.cm,霍尔电压为450μV。在同样的制备条件下保持x不变,用Co去替代部分Ni得到一系列[Fe21(NimCon)]x-(Al2O3)1-x颗粒膜,测量其霍尔电压,结果发现随着Co含量的增加,霍尔电压增大,当原子比n/m=0.6时,霍尔电压为1125μV。 A series of (Fe_(21)Ni_(79))_x-(Al_2O_3)_(1-x) nano-granular films was fabricated on glass substrates by magneto sputtering technique. The Hall effect of the samples was investigated. As a result, the saturated Hall resistivity of samples reached 4.5 μΩ.cm and the Hall voltage reached 450 μV in applied field of 1.2 T at room temperature and at x=0.48. substuting Co for a part of Ni under the same conditious and keeping x unchanged, a series of [Fe_(21)(Ni_mCo_n)]_x(Al_2O_3)_(1-x) nano-granular films was fabricated. The value of Hall voltage for [Fe_(21)(Ni_mCo_n)]_x-(Al_2O_3)_(1-x) thin films increased with increasing Co contents in the compositions of the alloys used as metallic component of the thin films and reached 1 125 μV at n/m=0.6.

关 键 词： 霍尔效应 纳米颗粒膜 磁控溅射 磁传感器 霍尔电压 钴含量 反常霍尔效应 霍尔系数

领　　域： [理学] [理学] [理学] [理学]