作　　者： ; ; (王维波）; (程伟）; (康耀辉）; (陆海燕）; (李欧鹏）; (谷国华）; (王志刚）; (徐锐敏）;

机构地区： 电子科技大学

出　　处： 《微波学报》 2014年第S1期113-115,共3页

摘　　要： 本文设计了一款W波段单片低噪声放大器(LNA),采用100 nm In0.52Al0.48As/In0.53Ga0.47As Ga As MHEMT(渐变组分高电子迁移率晶体管)工艺。该MMIC LNA采用4级放大电路结构,器件栅宽为2×20um,电路版图联合仿真结果表明该LNA在75-100GHz频带内,输入输出回波损耗均大于5d B,噪声系数小于5d B,增益大于17d B,带内增益平坦度小于1.5d B,W波段全频带内增益大于12d B。芯片面积为2.6mm×1.6mm。 In this paper, a monolithic W-band low noise amplifier(LNA) is presented by 100 nm In0.52Al0.48As/In0.53Ga0.47 As Ga As metamorphic high electron mobility transistors(MHEMTs). The LNA is consisted by 4 stages 2×20um gate width transistors. The total circuit achieves more than 5d B return loss, less than 5d B noise figure with more than 17 d B associate gain from 75 GHz to 100 GHz and gain flatness of less than 1.5d B. Also the total circuit achieves more than 12 d B associate gain in the whole W-band. The chip area is 2.6mm×1.6mm.

关 键 词： 低噪声放大器 波段

领　　域： [电子电信]