作　　者： ; ; ;

机构地区： 广东工业大学应用物理系

出　　处： 《压电与声光》 2003年第5期403-406,共4页

摘　　要： 以硝酸镧、醋酸铅、钛酸丁酯和异丙醇锆为原料,乙二醇甲醚作溶剂。用简单的溶胶-凝胶法和快速退火工艺在Si(111)、石英和Pt/Ti/SiO_2/Si(100)基片成功地制备出了高度多晶和(111)取向生长的(Ph,La)(Ti,Zr)O_3(PLZT)薄膜。用原子力显微镜分析了薄膜的表面形貌;测试了薄膜的铁电和介电特性。PLZT薄膜的剩余极化强度和矫顽场分别为10.3μC/cm^2和36kV/cm;在100kHz,薄膜的介电常数和损耗因子分别为682和0.021。生长在石英基片上的薄膜具有好的透光性,当波长高于360nm,其透过率高达72％。 Highly (111)-oriented (Pb0.91La0.09)(Ti0.65Zr0.35)O3(PLZT) thin films on Pt(111)/Ti/SiO2/Si(100) substrates were prepared by a simple Sol-Gel process with rapid thermal annealing (RTA),using analytically pure lanthanum nitrate La(NO3)2, lead acetate hydrate Pb(CH3COO)2 .3H2O, tetrabutyle titanate Ti(OC4H9)4 and zir-conium-n-proponed Zr(O(CH2)2CH3)4 as starting materials; 2-methoxyethanol C3H3O2 as a solvent. The PLZT films on Pt/Ti/SiO2/Si substrate were annealed at 600C by RTA for 10 min, the P, and Ec of the PLZT thin films are 10. 3uC/cm2 and 36 kV/cm, respectively; the er and tan S are 682 and 0. 021, respectively, at 100 kHz. The PLZT thin films grown on Si substrates are randomly orientation. The PLZT thin films grown on fused quartz substrates, exhibited the transmittance ratio larger than 72% when the wavelength higher than 360 nm.

关 键 词： 薄膜 取向生长 电性能 光学特性 溶胶 凝胶

领　　域： [电子电信]