作　　者： ; ; ; ; ; ;

机构地区： 清华大学

出　　处： 《半导体技术》 2003年第11期26-28,共3页

摘　　要： 在双台面SiGeHBT加工工艺过程中,采用RIE工艺刻蚀发射极台面时,为了避免等离子轰击对外基区表面造成损伤,同时为了防止过刻到基区,必须严格控制发射极台面的高度,从而必须准确知道未刻蚀前的厚度和刻蚀后的厚度。现有的许多对材料厚度及掺杂浓度的分析方法,具有各自的优缺点。本文提出了一种可以同时检测外延层的厚度及掺杂浓度分布的方法,这种方法具有简单、高效、低成本的优点。 In the double mesa SiGe HBT process, emitter mesas were made by RIE technology. Tokeep the external base region from damaging by plasmas and from over etching, the height of theemitter mesa must be controlled strictly. Consequently, the different heights of the emitter beforeetching and after etching have to be mastered. There have been a lot of methods for analyzing theheight and concentration of different materials, and they have their advantages and disadvantages.A new method of measuring the height and concentration of epitaxial layer simultaneously wasproposed. Simple, high efficiency and low cost are the advantages of this method.

关 键 词： 线性拟合 工艺刻蚀 四探针 外延层厚度 掺杂浓度 测量 加工工艺 双极性晶体管

领　　域： [电子电信] [电子电信]