作　　者： ; ; ; ;

机构地区： 华中科技大学光学与电子信息学院电子科学与技术系

出　　处： 《华中科技大学学报（自然科学版）》 2003年第10期22-25,共4页

摘　　要： 为了制备高性能铁电薄膜红外探测器 ,对Si微桥的湿化学腐蚀工艺进行了研究 .利用Si基片各向异性腐蚀特性 ,在四甲基氢氧化铵 (简称TMAH )水溶液中加入氢氧化钾 (KOH)作为各向异性腐蚀液 (简称KTMAH) ,研究了TMAH与KOH摩尔比、腐蚀浓度、腐蚀温度对Si基片腐蚀特性的影响 .结果表明 :Si(1 0 0 )面的腐蚀速度随着腐蚀液浓度和温度的升高而增大 ,随着TMAH与KOH摩尔比的降低 ,KTMAH腐蚀液对掩膜层的腐蚀程度加剧 .选用 5 g/L的过硫酸盐 (PDS)与TMAH质量分数为 2 5 %、TMAH与KOH摩尔比为2的KTMAH混合液作为腐蚀液 ,并在 80℃× 2 .5h的腐蚀条件下能得到平整的腐蚀面 。 The Si micro bridge was fabricated by wet chemical etching technique in order to get good infrared thermal imaging system with ferroelectric thin films. The effect on the anisotropy of etching solution was studied by changing the mol ration of TMAH/KOH in the etching solution, temperature and time. The results indicated that the etching solution velocity of Si (100) increased with the increasing of the etching solution concentration and temperature, and the etching solution degree was speeded up with the decreasing of the mol ratio of TMAH/KOH for different system. Good micro bridge can be obtained in the system when PDS is 5?g/L, the quality percentage of TMAH is 25?%, the mol ratio of TMAH/KOH is 2, and the technique is 80?℃×2.5?h.

关 键 词： 基片各向异性 腐蚀特性 腐蚀液

领　　域： [电子电信]