作　　者： ; ; ;

机构地区： 韩山师范学院物理系

出　　处： 《浙江师范大学学报（自然科学版）》 2002年第3期246-249,共4页

摘　　要： 利用固相晶化法获得多晶硅薄膜 (退火温度 70 0～ 80 0℃ ) ,采用XRD、Raman等分析手段进行了表征与分析 .研究结果表明 :晶粒平均尺寸随着退火温度的降低、掺杂浓度的减少、薄膜厚度的增加而增加 ;并且退火后薄膜暗电导率提高了 2～ Polycrystalline silicon films were obtained by solid-phase crystallization (SPC) of a-Si:H films deposited by PCVD,at the annealing temperature of 700℃,750℃ and 800℃, respectively.The films were characterized and analyzed by X-ray diffraction (XRD) and Raman spectra.It is found that the average grain sizes of the films are dependent on the deposition and annealing conditions.The grain size is expanded when the sample is thickened,the doping concentration and the annealing temperature are decreased.At the same time,the dark conductivity of each sample is promoted from 10 2 to 10 4 times.

关 键 词： 多晶硅薄膜 固相晶化法 薄膜 平均晶粒尺寸 退火温度 掺杂浓度 薄膜厚度

领　　域： [理学] [理学]