作　　者： ; ; ; ;

机构地区： 华南理工大学理学院应用物理系

出　　处： 《华南理工大学学报（自然科学版）》 2003年第8期19-22,共4页

摘　　要： 在完成超高频小功率晶体管的芯片和上部铝电极的制备工艺后 ,采用低能量氩离子束轰击芯片背面 ,能有效地降低其高频及低频噪声系数、提高其特征频率和电流放大系数 .实验结果表明 ,晶体管低频噪声系数的下降与硅—二氧化硅界面的界面态密度的减小有关 。 A low energy argon ion beam has been applied to bombard the backsurface of silicon wafers after the ultrahigh frequency low power transistors are fabricated, and the noise coefficient of low frequency and high frequency can be decreased effectively, the characteristics frequency and current gain of direction current can be increased. The experimental results show that the decreasing of low frequency noise coefficient are relevant to the decreasing of interface state density at SiO 2-Si system, and the reduction of high frequency is owing to the increasing of the characteristics frequency and current gain of direction current.

关 键 词： 氩离子 轰击 噪声 寿命 晶体管

领　　域： [电子电信]