作　　者： ; ; ; ;

机构地区： 华南理工大学理学院应用物理系

出　　处： 《仪表技术与传感器》 2003年第5期3-5,共3页

摘　　要： 重点阐述了在薄膜SOI上制成的扩展电阻温度(SRT)传感器的阻温特性(R-T).利用器件二维模拟软件PISCES研究了最高工作温度(Tmax)的Si膜厚度效应,模拟结果表明,在相同的衬底掺杂浓度下,Si膜厚度越薄,器件的Tmax越高.实验结果也验证了这一点,薄膜SOISRT传感器不仅具有非常好的器件特性,Tmax高至450℃以上,而且它的工作偏置电流低至1μA,比体Si SRT传感器小103倍.因此,薄膜SOISRT传感器具有很广阔的低功耗应用前景. SRT sensor on thin - film SOI is investigated with emphasis on its resistance versus temperature (R - T). The effect of Si - film thickness on the maximum operating temperature ( Tmax) is studied based on the two - dimensional semiconductor device simulator PISCES. The simulation results demonstrate that the thinner the silicon film, the higher is theTmax . Experimental results also verify this point, thin - film SOI SRT sensor not only achieves promising device characteristics, the Tmax can be over 450℃, but also shows that the bias current of the thin - film SOI SRT sensor can be as low as 1μA, which is one thousand times less than that of bulk Si SRT sensor. Thus SRT sensor on thin - film SOI can cover a wider scope of low - power applications.

关 键 词： 扩展电阻 温度传感器 阻温特性 薄膜

领　　域： [自动化与计算机技术] [自动化与计算机技术]