作　　者： ; ; ; ; ; ; ; ;

机构地区： 五邑大学

出　　处： 《光电子．激光》 2003年第4期375-379,共5页

摘　　要： 通过对RF-PECVD技术沉积氢化非晶/微晶硅(a-Si:H/μc-Si:H)薄膜沉积过程中硅烷(SiH4)等离子体的光发射谱(OES)原位测量,系统地研究了不同的等离子体工艺条件下,特征发光峰强度(ISiH*、IHα)的变化规律。结果表明:随着SiH4浓度增大,IsiH*单调增大且在不同浓度范围内变化快慢不同,和IHβ峰表现为先增后减的变化,最大值位于3～5%的SiH4浓度之间;工作气压的增大,各特征和IHβ而IHα发光峰均呈现出先增后减的变化,但最大值对应的工作气压点有所不同;增大等离子体功率,所有的特征发光峰单调增加,但在不同的功率区间内变化快慢存在明显差异;气体流量在40～75sccm范围内变化时对特征发光峰的影响最为显著,更低流量时变化很小,更高流量则趋于饱和;衬底温度不仅影响生长表面的发应,对SiH4分解机制的影响不容忽视。 In situ optical emission spectroscopy (OES) diagnosis on HP-generated SiH4 plasmas under different deposition conditions to fabricate a-Si:H/μc-Si:H films has been presented. From the OES spectra measured, where the valuable information on the SiH* and H* intensities (ISiH*, IHα and IHβ were provided, the following results can be confirmed: With the increase of SiH4 concentration, ISiH* increased monotonously but at different rate for different region, while IHα and IHβ increased firstly and then decreased. All the intensities changed according to the same shape as increasing working pressure, but the points corresponding to the maximum are a little different. With the increase of plasma power, all the intensities behaved almost the same, although at different rate for different power region. Moreover, the influence of gas flowrate and substrate temperature on the RF SiH4 plasma have been firstly investigated in detail.

关 键 词： 氢化非晶 微晶硅 射频辉光放电 硅烷等离子体 光发射谱

领　　域： [电子电信]