作　　者： ; ; ;

机构地区： 长安大学材料科学与工程学院

出　　处： 《材料热处理学报》 2014年第4期13-17,共5页

摘　　要： 采用光辐射加热悬浮区熔法以3 mm/h的生长速度成功制备了Tb2PdSi3单晶。通过分析得知,该化合物为同成分熔融化合物,熔点约为1700℃。和其它R2PdSi3型化合物(R为稀土元素)不同,在单晶基体中没有发现TbSi沉淀,分析原因可能是因为晶体中Tb含量略高于化学计量比。采用X射线Laue背散射实验对晶体的晶格结构和高完整性进行了验证,并对定向单晶的a和c方向磁化率-温度曲线进行了测定。 Tb2PdSi3single crystals were grown by a vertical floating zone method with radiation heating at a zone traveling rate of 3 mm / h.Congruent melting behavior of this compound was proved at a liquidus temperature of about 1700 ℃ which was corresponding to the DTA value.Platelet-like precipitates of TbSi phase was not found in the crystal matrix which was unavoidable in other R2PdSi3compound single crystal growth.It may be caused by the slightly Tb-enrichment in the crystal matrix.AlB2type crystal structure and high crystal perfection were proved by X-ray Laue back scattering images.The !(T) curves of both a and c axis were measured.

关 键 词： 悬浮区熔 单晶生长 稀土化合物 磁性能

领　　域： [理学] [理学]