作　　者： ;

机构地区： 华南理工大学材料科学与工程学院光通信材料研究所

出　　处： 《量子电子学报》 2003年第1期10-17,共8页

摘　　要： 超高亮度GaN基蓝色LED的发展将会引起照明技术的一场革命,它是目前全球半导体领域研究和投资的热点。本文综合分析了了GaN材料的特性及相应的材料生长和欧姆接触、刻蚀工艺等关键技术,并对GaN基蓝色LED器件的进一步改进及应用前景作了展望。 With further development of the high brightness blue GaN-based LEDs, it would bring about a revolution in the illumination field. GaN-based materials are the focus in the semiconductor research and investment at present. In this paper. An overview of the basic properties of the nitrides, material film growth and some key techniques, such as ohmic contact, etching of GaN-based LED epilayer recent progress and the future prospect of GaN-based blue HB-LED devices is also presented.

关 键 词： 高亮度 蓝色 欧姆接触 刻蚀 发光二极管 氮化镓 发展现状 外延生长

领　　域： [电子电信]