作　　者： ; ; ; ; ;

机构地区： 华南师范大学物理与电信工程学院物理系

出　　处： 《功能材料》 2003年第1期108-109,共2页

摘　　要： 　用红外光谱和拉曼光谱分析了用低温电子回旋共振等离子体CVD技术制备的Si3N4薄膜的键态结构。结果表明Si3N4薄膜主要由Si—N键结构组成,还含有Si—H和Si—O—Si键结构。随着沉积温度的提高,Si3N4薄膜中的Si—H键减少,氢含量降低。可利用提高沉积温度来减少Si3N4薄膜中的氢含量。在沉积温度为420℃时Si3N4薄膜的Raman光谱在短波方向出现一新的展宽的拉曼散射峰。 Infrared spectrosopy and Raman spectroscopy were applied to the analysis of the bonding structure of silicon nitride thin films prepared by plasma enhanced and low temperature chemical vapor deposition. Films were grown on KBr and (111) monoxrystallinesilicon substrates at different temperatures/ The results of infrared spectroscopy indicated that there were Si-H, Si-H and Si-O-Si bonds in the silicon nitride thin films. The Si-H bonds decreased and the hydrogen content reduced at higher deposition temperature.Increasing deposition temperature could reduce the content of hydrogen in the films.A new stretching peak emerged on the Raman spectrum at depsition tempature of 420℃.

关 键 词： 制备 氮化硅薄膜 键态结构

领　　域： [理学] [理学]