作　　者： ;

机构地区： 华南理工大学电子与信息学院

出　　处： 《华南理工大学学报（自然科学版）》 2003年第1期38-41,共4页

摘　　要： 通过理论分析、实际设计和实验 ,对矩形平面磁控溅射靶表面水平磁感应强度B的传统取值上限进行了拓展 .结果表明 :若阴极靶体下表面和 4个侧面的的磁感应强度被屏蔽低于 0 .0 0 0 5T ,同时上表面覆盖同一靶材 ,则可抛弃屏蔽罩 ,采用裸靶结构 ,靶表面的水平磁感应强度B就可以远高于 0 .0 5T ,达到 0 .0 9T ;此外 ,B的增加显著降低了磁控溅射镀膜工艺的着火电压和维持放电电压 。 The traditional upper limit of magnetic induction density B parallel to target surface in rectangular planar magnetron sputtering target has been increased by analyzing, designing and experimenting. The results show that shielding cover can be discarded, naked target can be adopted and the B can exceed 0.05 T greatly and achieved 0.09 T ,under the condition of the of magnetic induction density parallel to cathode bottom and sides under 0.000?5 T by shielding, and at the same time the cathode upper surface is covered with the same kind of target material. Further more, the increase of B reduced greatly the touching off and keeping discharge voltages during magnetron sputtering coating, which gives another approach to lower voltage magnetron sputtering.

关 键 词： 屏蔽罩 矩平面磁控溅射靶 磁控溅射镀膜 磁感应强度 设计原理

领　　域： [电子电信]