作　　者： ; ; ; ;

机构地区： 暨南大学理工学院物理学系

出　　处： 《光电子．激光》 2009年第7期882-885,共4页

摘　　要： 制备了结构为ITO/CuPc(25nm)/NPB(40nm)/Alq3(xnm)/C60(ynm)/LiF(1nm)/Al(100nm)的有机发光二极管(OLEDs),研究了C60插入层对器件性能的影响。结果表明,在无C60的器件中,当Alq3层较厚时,器件的电流密度-电压(J-V)曲线右移,不利于获得高功率效率;当Alq3层较薄时,又会导致激子在LiF/Al阴极的严重淬灭。实验优化得出,在无C60的器件中,Alq3厚为45nm的器件可获得最高的功率效率。在Alq3与LiF之间插入15nmC60层后,对器件的J-V曲线几乎没有影响,但C60层阻挡了激子向阴极扩散,减少了淬灭。当在Alq3厚度为45nm的器件的Alq3和LiF间插入15nmC60层后,可使器件获得更高的功率效率,尤其是插入15nmC并将Alq厚度降至30nm,获得了最大的功率效率。 The organic light-emitting diodes (OLEDs) with a structure of ITO/CuPc(25 nm)/NPB(40 nm)/Alq3(xnm)/C60(ynm)/LiF(1 nm)/Al(100 nm) are prepared.The results show that the current density-voltage curve shifts to right with the increase of the thickness of Alq3,which reduces the power efficiency.However,if the thickness of Alq3 is too thin,there would be serious exciton quenching caused by the cathode of LiF/Al.The device with 45 nm Alq3 has the best power efficiency for the devices without C60 inserting layers.Inserting C60 between Alq3 and LiF scarcely affects the current density-voltage curve,and it can partially block the exciton diffuseness to the cathode and decrease the quenching caused by the cathode of LiF/Al.When a 15 nm C60 layer is inserted in the device with 45 nm Alq3,its power efficiency is significantly improved.In particular,the device with 30 nm Alq3 and 15 nm C60 layer can get maximal power efficiency.

关 键 词： 有机发光二极管 激子阻挡层

领　　域： [电子电信]