作　　者： ; ; ; ; ; ;

机构地区： 北京师范大学物理学系

出　　处： 《物理学报》 2002年第12期2892-2895,共4页

摘　　要： 对掺有镉、硒、硫的玻璃在 5 0 0— 80 0℃退火 2— 2 4h ,生长了不同尺寸的CdSxSe1 x纳米晶体 .用分光光度计和光致发光光谱 (PL)分析了纳米晶体的性能 .退火温度低于 5 5 0℃ ,纳米晶体处于成核阶段 ,6 0 0— 6 2 5℃处于正常扩散生长阶段 ,70 0— 80 0℃处于竞争生长阶段 ;而 6 5 0℃处于两种生长阶段之间 .虽然 6 5 0℃下生长的纳米晶体的尺寸分布比较窄 ,但纳米晶体的尺寸随退火时间的延长几乎不变 ,在该温度改变退火时间很难改变纳米晶体的平均尺寸 .在所有样品中出现了深能级缺陷 ,在 6 5 0℃退火时间小于 4h或大于 16h有利于减少深能级缺陷的密度 . CdSxSe1-x nanocrystals of different sizes were grown by annealing the glass which contains Cd, Se and S at 500-800degreesC for 2-24h. The properties of nanocrystals were analyzed with a spectrophotometer and a photoluminescence spectroscope. Nanocrystals only nucleated when the annealing temperature was lower than 550degreesC. They grew in the normal growth mode at 600-625degreesC and in a competitive growth mode at 700-800degreesC and 650degreesC was in the middle of the two stages. Although the size distribution of the nanocrystals grown at 650degreesC was narrower than those grown at other temperatures, their size was almost unchanged with the increase of annealing time. This indicates that it was unsuitable to change nanocrystal mean sizes by means of change of annealing time at 650degreesC. Deep traps were observed in all of the samples. It was suitable to reduce deep-trap density as the annealing time was shorter than 4h or longer than 16h at 650degreesC.

关 键 词： 玻璃 性能 纳米晶体 生长机理 深能级缺陷

领　　域： [理学] [一般工业技术]