机构地区: 华南师范大学物理与电信工程学院物理系
出 处: 《材料科学与工程学报》 2014年第5期629-633,664,共6页
摘 要: 少层(1-5层)大面积均匀石墨烯的可控制备,是实现石墨烯在逻辑器件和透明导电电极中使用的关键。本工作使用常压化学气相沉积(CVD)方法,在铜镍合金基底上生长出少数层大面积均匀石墨烯。通过调节铜镍合金的厚度以及控制生长过程中的温度、时间、碳源浓度,本工作实现了层数可控石墨烯的制备。光学显微术、拉曼光谱、紫外可见吸收光谱、高分辨率透射电镜表征结果表明:制备出的石墨烯是大面积均匀的高质量少层石墨烯。 Controllable synthesis of large area few-layer graphene is critical to the application of graphene in logic devices and transparent conductive electrodes.In this paper,large area few-layer graphene films were synthesized on Cu-Ni alloy foil by chemical vapor deposition at ambient pressure.A viable synthesis of layer-controlled graphene is developed by adjusting alloy thickness,temperature,methane concentration and growth time.Characterizations of optical microscopy,Raman spectra,UV-Vis spectra and HRTEM indicate that the synthesized materials are large-area uniform and high-quality few-layer graphene films.