作　　者： ; ; ;

机构地区： 华南理工大学理学院应用物理系

出　　处： 《Journal of Semiconductors》 2002年第8期825-829,共5页

摘　　要： 采用以低压氙 (Xe)气激发真空紫外光作光源 ,以 Si H4和 O2 作反应气体的直接光 CVD技术淀积 Si O2 薄膜 .通过椭圆偏振法、红外光谱法、C- V特性法对不同衬底温度下淀积的 Si O2 薄膜的特性进行研究 .结果表明 :衬底温度在 40～ 2 0 0℃范围内 ,薄膜的折射率在 1.40～ 1.46之间 ,在沉积膜的红外光谱中未出现与 Si— H、Si— OH相对应的红外吸收峰 .Si O2 薄膜中固定氧化物电荷密度受衬底温度影响较大 ,其最小值可达 1.73× 10 1 0 cm- 2 . The direct photo-CVD SiO_2 thin films are deposited by using the SiH_4 and O_2 as the reaction gas and the low pressure Xe excited vacuum ultra-violet(VUV) as the optical source.With ollipsometry,Fourier transform infrared spectrometer(FTIR),capacitance-voltage( C-V ) measurements,the properties of the thin films deposited at different substrate temperatures are studied.The result indicates that at the range of substrate temperature from 40 to 200℃,the refractive index of the deposited films is 1.40～1.46.There are no infrared absorption peaks related to the Si-H bonding and Si-OH bonding in the thin films.The substrate temperature has great influence on the properties of both the SiO_2 films and the SiO_2/Si interface.The fixed charge density of the SiO_2-Si system is estimated from the C-V curve,the minimum value is about 1.73×10 10 cm -2 .

关 键 词： 衬底温度 薄膜特性 氧化硅 气相沉积

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