作　　者： ; ; ; ; ;

机构地区： 大连理工大学

出　　处： 《微电子学与计算机》 2002年第1期60-64,共5页

摘　　要： 文章分析了在ECR-MOCVD装置上外延生长GaN单晶薄膜的工艺过程特点和在此过程中影响GaN结晶质量的主要因素。在此基础上,设计了一套由80C31单片机为核心的光电隔离电路和PC机组成的两级系统,用于GaN薄膜外延生长的工艺流程监控,并提出了一种合适的工艺流程监控策略。 We analyze the process characteristics of epitaxy growth for GaN single- crystal films using ECR- MOCVD devices,and the main questions which effect the GaN crystalline quality during the epitaxy growth. Then,we design a set of monitoring system comprised of PC computer and photoelectric circuits based on 80C31 microcomputer,which was used in the epitaxy growth process of GaN film. At the same time,we proposed a kind of suitable monitoring method for process. The practical application shows that our reasonable software and hardware system designs,it also shows our reasonable anti- interfere design. All of these ensure our growth process is continuous,meanwhile,the accuracy of our experiment parameters and the reproducibility of our growth process are improved significantly. It also has guidance value for automatic design of similar growth process to some extent.

关 键 词： 外延生长 半导体材料 工艺流程 实时监控系统

领　　域： [电子电信]