作　　者： ; ; ; ; ; ;

机构地区： 中国科学院金属研究所

出　　处： 《金属学报》 2001年第11期1217-1222,共6页

摘　　要： 对热丝化学气相沉积（ＨＦＣＶＤ）生长金刚石膜过程中影响衬底温度场的热丝几何参数及其他相关沉积参数进行了模拟计算．结果表明，通过优化参数，用８０ｍｍ ×８０ｍｍ的热丝阵列可以获得７６ｍｍ × ７６ ｍｍ面积的均匀衬底温度区，进一步利用辅助热丝则可将均温区面积扩大到 １００ｍｍ×１００ｍｍ．这些结果可以为沉积高质量、大面积金刚石膜的工艺参数提供理论依据． Numerical simulations were used to investigate the influence of various hot filaments and other deposition parameters on substrate temperature field which affects significantly the growth and quality of diamond films by hot-filament chemical vapor deposition (HFCVD). It was found that the homogenous substrate temperature region 76 mm x 76 min with the maximum temperature fluctuation no more than 5% could be obtained by a 80 mm x 80 mm filamentary heater and it could be improved to 100 mm x 100 mm under the condition of supplementary hot filaments with appropriate parameters. All of these theoretical results provided the basis for optimizing the technological parameters to deposit high quality and uniform diamond films over large area.

关 键 词： 热丝化学沉积 金刚石膜 温度场 模拟计算

领　　域： [理学] [理学] [金属学及工艺] [金属学及工艺]