作　　者： ; ; ; (刘少森）;

机构地区： 广东工业大学材料与能源学院

出　　处： 《电镀与涂饰》 2014年第12期495-498,共4页

摘　　要： 先采用0.3 mol/L草酸溶液在0°C、8.9 mA/cm2下对纯铝板进行二次阳极氧化,制得氧化铝多孔膜(AAO),随后以AAO为模板,采用直流电沉积法制得Bi2Te3纳米线阵列。镀液组成和工艺条件为:Bi3+0.007 5 mol/L,2HTeO+0.001 25 mol/L,3NO-1 mol/L,温度0°C,pH 0.1,时间2 h。研究了沉积电位对沉积过程的电流变化以及纳米线的Te含量、形貌和结构的影响,得到最佳沉积电位为1.4 V。在1.4 V下沉积所得纳米线结构致密、连续,孔径约为90 nm,与AAO的孔径一致。 Porous anodic alumina oxide （AAO） film was obtained by two-step anodization of pure aluminum plate in 0.3 mol/L oxalic acid solution at 0 ℃ and 8.9 mA/dm^2, and then used as a template to prepare BiETe3 nanowire array by direct current deposition. The plating bath composition and process conditions are as follows： Bi3＋ 0.007 5 mol/L, HTeO2＋ 0.001 25 mol/L, NO3- 1 mol/L, temperature 0 ℃, pH 0.1, and time 2 h. The effects of deposition potential on the current variation during electrodeposition, as well as the Te content, morphology, and structure of nanowire were studied. The optimal deposition potential is determined as 1.4 V. The nanowire deposited at 1.4 V is compactly and continuously structured, with an aperture of ca.90 nm which is the same as that of AAO film.

关 键 词： 碲化铋 直流电沉积 纳米线阵列 多孔阳极氧化铝膜 模板

领　　域： [化学工程]