作　　者： ; ; ;

机构地区： 清华大学信息科学技术学院电子工程系

出　　处： 《微细加工技术》 2001年第1期37-40,共4页

摘　　要： 平面阴极的场致发射显示器件由于性能优越、结构简单而具有很好的应用前景。这种器件要实用化 ,急需提高阴极的电子发射率。提出一种改进栅极结构的方法达到提高电子发射率的目的 ;介绍了双金属栅极的结构和制作工艺 ;阐述了利用两种金属的接触电位差降低阴极电子发射势垒的原理 ;解释了实验中低驱动电压时发射率提高较多的现象。与单金属栅极相比双金属栅极的阴极电子发射率提高了 5倍以上。 Flat cathode field emission display (FED) is a good candidate for high resolution display because of its high quality and simple structure.This device must have higher electron emission efficiency for practical application.In this paper a new structure of gate with double metals is raised to increase the electron emission efficiency. The principle of the new structure is that the contact potential of the two kind of metals is utilized to decrease the surface potential barrier.It is obtained that the emission efficiency of the cathode with double metals gate is more than 5 times higher than the efficiency of the cathode with single metal gate.It is also explained that the improvement of the emission efficiency is more apparent for lower gate voltage in the experiments.

关 键 词： 场发射 双金属栅极 阴极 电子亲和势

领　　域： [电子电信]