机构地区: 广东工业大学机电工程学院机械电子工程系
出 处: 《真空》 2000年第6期12-15,共4页
摘 要: 研究了在真空电弧镀膜设备中产生纳米 Ti N颗粒沉降的临界条件。结果表明 ,当真空度P>8.7× 10 - 1 Pa,即 Knudsen数 Kn>110时 ,工作台中心几乎不能沉积 Ti N薄膜 ,而在真空反应气氛中有大量纳米 Ti N颗粒形成。增大反应气体的压力和提高负偏压 ,都可以进一步细化 Ti N颗粒。用 SEM和 XRD等测试方法对颗粒的形貌及结构进行了研究 ,在实验条件下纳米 Ti N颗粒的平均尺寸为 2 8~ 35 nm,其中有少量的 The critical condition of sedimentation of TiN nanograin prepared by vacuum arc deposition equipment is studied. The results show that TiN film can not be deposited at the center of working platform when the vacuum degree P>8.7×10 1 Pa, i.e. the number of Knudsen Kn>110, while a great deal of TiN nanograins are sedimentated in reaction atmosphere. The greater pressure of reaction gasses and negative bias voltage, the finer TiN nanograins are. The morphology and structure of the nanograins are studied by means of SEM and XRD. Average size of nanograins is around 28~35nm, and a small quantity of Ti grains in it.