作　　者： ;

机构地区： 华南理工大学电力学院

出　　处： 《中国电机工程学报》 2014年第3期371-379,共9页

摘　　要： 以碳化硅(silicon carbide,SiC)为主的第3代半导体技术突破了硅材料半导体器件在耐压等级、工作温度、开关损耗和开关速度上的极限,能够显著减少电力电子变换器的重量、体积、成本,提高电力电子系统的性能。一直以来,高功率密度电动汽车电力驱动系统一直是新一代大功率电动汽车发展的主要挑战,而宽禁带功率器件的应用,将对新一代电动汽车特别是混合电动汽车的发展产生重要影响。论文主要介绍SiC功率半导体器件的发展,对SiC器件在电动汽车中的研究现状与应用前景进行分析和展望,最后探讨SiC器件在电动汽车电力驱动系统应用中面临的主要问题。 The third generation of wide bandgap semiconductor as silicon carbide （SIC） breakthroughs the performance caps of silicon （Si） based power semiconductor devices in voltage, temperature, switching loss and switching speed, thus, the weight, size and cost of power electronic converters may be decreased, and the performance of power electronic system may be improved significantly. Power driver of electric vehicles with high power density is always the main development challenge of high power electric vehicles. The usage of wide bandgap semiconductors may has significant impacts on new generation electric vehicles, especially hybrid electric vehicles. In this paper, the developmertt of SiC power devices is introduced first; then, research statues and application prospects of SiC devices in electric vehicle are presented; last, the main problems of EV driving system using SiC power devices are discussed.

关 键 词： 碳化硅 宽禁带 功率器件 电动汽车驱动系统

领　　域： [电气工程]